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US Patent Issued to Micron Technology on Aug. 25 for "Memory device access lines" (Idaho, New Mexico Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,731, issued on Aug. 25, was assigned to Micron Technology Inc. (Boise, Idaho). "Memory device access lines" was invented by Daniel Billings... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor memory devices having active and isolation patterns" (South Korean Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,732, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory devices having active a... Read More


US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on Aug. 25 for "Semiconductor structure, its read/write controlling and method of making the same" (Chinese Inventor)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,733, issued on Aug. 25, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure, its read/write con... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,734, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More


US Patent Issued to SAMSUNG ELECTRONICS on Aug. 25 for "Semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,735, issued on Aug. 25, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor memory device" was invented by... Read More


US Patent Issued to Invention And Collaboration Laboratory on Aug. 25 for "Semiconductor memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,736, issued on Aug. 25, was assigned to Invention And Collaboration Laboratory Pte. Ltd. (Singapore). "Semiconductor memory structure" was ... Read More


US Patent Issued to NANYA TECHNOLOGY on Aug. 25 for "Memory device with tapered bit line contact and method for preparing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,737, issued on Aug. 25, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device with tapered bit line contact and ... Read More


US Patent Issued to eMemory Technology on Aug. 25 for "Voltage level shifter" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,738, issued on Aug. 25, was assigned to eMemory Technology Inc. (Hsin-Chu, Taiwan). "Voltage level shifter" was invented by Yu-Hsuan Cheng ... Read More


US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on Aug. 25 for "Three-dimensional memory devices and methods for forming the same" (Chinese Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,739, issued on Aug. 25, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory devices and methods ... Read More


US Patent Issued to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) on Aug. 25 for "Three-dimensional flash memory supporting hole injection erase technique and method for manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 25 -- United States Patent no. 12,720,740, issued on Aug. 25, was assigned to IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY) (Seoul, South Korea). "Thr... Read More